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Tech Updates

Date
April 2018

To bring out the practical applications of perovskite solar cells and overcome the limitations of perovskite PV technology, a consortium ESPResSo (Efficient Structures and Processes for Reliable Perovskite Solar Modules) has been formed by EU. The ESPResSo team targets alternative cost effective materials, novel cell concepts and architectures, and advanced processing know-how and equipment to overcome the current limitations of this technology. The consortium aims to bring the cell performance close to its theoretical limit by demonstrating cell efficiency of more than 24% (on 1cm²) and less than 10% degradation in cell efficiency following thermal stress at 85°C, 85% RH for over 1000 hours.

Date
April 2018
Source

Intel is losing a long held lead on its chief competitors, TSM and Global Foundries, due to a delay in the manufacture of 10nm chips. It is becoming a risk to the chip sales by Intel. The competitors are really closing the gap between and Intel despite the nomenclature for various technologies. They may even outperform Intel by 2021, the year Intel is expected to move towards next advanced technology. Despite all the competition, the rivals are risking the manufacturing process itself by moving faster than Intel in chip-making lithography.

Date
April 2018
Source

After amassing $1 billion in IoT revenue in FY2017, Qualcomm is announcing new product families especially for IoT applications. Introducing AI to the edge devices, commonly referred for the devices we use, will reduce cloud and connectivity bandwidth requirements which will enhance security and system performance. For applications which require local processing such as autonomous cars, Qualcomm vision Intelligence Platform aims to bring increased security and system performance to accommodate size, thermal limits and battery life.

Quasi Non-Volatile Memory
Date
April 2018
Source

The researchers at Fudan University have developed a new technique to combine the benefits of static random access memory and dynamic random access memory. The new device dubbed as” quasi-non-volatile” will make up for DRAM’s limited data retention capacity and high cost of SRAM. The new gate design for transistors may fill the gap between volatile and non-volatile memory. The researchers have shown that the 2D SFG memory they have fabricated has 156 times longer refresh time (10 seconds) than DRAM (64 milliseconds), which saves power, and ultrahigh-speed writing operations on nanosecond timescales (15 nanoseconds). The device architecture consists of a channel made from the 2D material tungsten diselenide.

Date
April 2018
Source

French government is investing a surplus of 1.5 billion euros in major chipmakers Fujitsu, Samsung and Deep Mind to establish increased AI research in the country. French investment focusses on areas like healthcare, transport-mobility, environment and defense/security.