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Tech Updates

high performance elastomer socket
Date
November 2017

Ironweek Electronics  has recently introduced a new high performance elastomer socket for 0.4mm pitch BGA package. The SG25-BGA-2042 socket is designed for a 4.47mmx4.34mm package size and operates at bandwidths up to 40 GHz with less than 1dB of insertion loss (GSSG configuration). The contact resistance is typically 20 milliohms per pin. Network analyzer reflection measurements for the G-S-S-G case were taken with all except the pins under consideration terminated into 50 Ohms.

Advanced packaging market forecast
Date
October 2017

 

The MEMS packaging market is expected to grow at 16.7% CAGR upto 2022, hysterically the packaging market’s value is growing faster than device market itself. Costing Analysts say that rather than tremendous changes in packaging platform, the need is to develop platforms that can better respond to  growing needs of sensor fusions. The strong CAGR of certain devices such as RF MEMS devices impacts the MEMS packaging industry with numerous opportunities.  

Date
October 2017

 

The MEMS packaging market is expected to grow at 16.7% CAGR upto 2022, hysterically the packaging market’s value is growing faster than device market itself. Costing Analysts say that rather than tremendous changes in packaging platform, the need is to develop platforms that can better respond to  growing needs of sensor fusions. The strong CAGR of certain devices such as RF MEMS devices impacts the MEMS packaging industry with numerous opportunities.  

Date
October 2017

Sony has designed a first of its kind, automotive-grade sensor with stacked configuration to be used in chips.  The IMX324 offers a resolution of 7.42 megapixels, approximately three times the horizontal resolution of conventional products, which enables high-definition image capture of distant road signs approximately 160 metres ahead of the camera. the new sensor is expected to be compatible with the EyeQ4 and EyeQ5 image processors currently being developed by Intel subsidiary Mobileye for use in ADAS and autonomous vehicle technology.

 

2 Dimensional TMD
Date
October 2017

A group of researchers at MIT have investigated MoTe2, a two-dimensional transition-metal dichalcogenide (TMD)  in their search for silicon-compatible photonic materials for the on-chip integration of optical communications, yielding promising results. The MoTe2 p–n junction consists of an exfoliated bilayer of MoTe2 separated by a hexagonal boron nitride (h-BN) dielectric layer from a dual graphite gate. Instead of relying on dopants (typically seen as crystal impurities), the p- and n-type doping is induced electrostatically by applying different voltages to the graphite gates. The on-demand electrostatic split-gate configuration allows for diverse functionalities to be programmed, including transistors, light-emitting diodes (LEDs) and photodetectors, coupled with an underlying silicon photonic-crystal (PhC) waveguide (a holey silicon membrane).